Growth of multi-crystalline silicon ingot by improved directional solidification process based on numerical simulation

A multi-crystalline silicon (Si) ingot was simulated and grown using the improved directional solidification (DS) process. Numerical simulations were performed with two different cooling paths and two different coolant flow rates in order to demonstrate the thermal characteristics in the improved DS furnace during the crystal growth. The temperature distributions in the furnace and locally (at the silicon ingot) were predicted as a function of time. From these result, a multi-crystalline Si ingot weighing 300 kg was grown within 40 h using the improved DS process. The Si ingot had a grain size that was larger than 5 mm, and the structure of the ingot was in the form of vertical columns. From the analysis results, the Si ingot exhibited a resistivity below 2 Ω cm and a life time above 3 μs.

Graphical AbstractLocal temperature distribution for several sections of the effective coolant pathway in the Type 1 (t=60 min): (a) three-dimensional view point, (b) peripheral, (c) center, (d) top and (e) bottom surface of the Si ingot.Figure optionsDownload as PowerPoint slideResearch highlights
► A multi-crystalline silicon (Si) ingot was simulated on the two different flow path and grown using the improved directional solidification (DS) process.
► The thermal characteristics was a key factor in order to control the high quality Si ingot manufacturing process.
► A 300 kg, high quality multi-crystalline Si ingot was obtained and this ingot is suitable for use as a Si wafer in solar cells.