کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7965393 | 1514180 | 2015 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance
ترجمه فارسی عنوان
ساختارهای اتمیستیک مقاومت سیلیسیم نانو و مقاومت آمورفزاسیون ناشی از اشعه
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
چکیده انگلیسی
Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2Â MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 465, October 2015, Pages 433-437
Journal: Journal of Nuclear Materials - Volume 465, October 2015, Pages 433-437
نویسندگان
Kenta Imada, Manabu Ishimaru, Kazuhisa Sato, Haizhou Xue, Yanwen Zhang, Steven Shannon, William J. Weber,