کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79767 | 49366 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly transparent and conducting fluorine-doped ZnO thin films prepared by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Highly transparent and conducting fluorine-doped ZnO thin films prepared by pulsed laser deposition Highly transparent and conducting fluorine-doped ZnO thin films prepared by pulsed laser deposition](/preview/png/79767.png)
چکیده انگلیسی
Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited on glass substrates by pulsed laser deposition. Structural, electrical, and optical properties of the films were investigated as a function of oxygen pressure ranging from 0.01 to 0.5 Pa. All the films had a highly preferential c-axis orientation. The films obtained were dense and very smooth with a typical columnar structure. A minimum resistivity of 4.83×10−4 Ω cm, with a carrier concentration of 5.43×1020 cm−3 and a Hall mobility of 23.8 cm2 V−1 s−1, was obtained for FZO film prepared at the optimal oxygen pressure of 0.1 Pa. The average optical transmittance in the entire visible wavelength region was higher than 90%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 3, March 2011, Pages 894–898
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 3, March 2011, Pages 894–898
نویسندگان
Ling Cao, Liping Zhu, Jie Jiang, Ran Zhao, Zhizhen Ye, Buihui Zhao,