کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79813 | 49367 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Cd1−xZnxS films with controllable zinc doping using a vapor zinc chloride treatment
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of Cd1−xZnxS films with controllable zinc doping using a vapor zinc chloride treatment Fabrication of Cd1−xZnxS films with controllable zinc doping using a vapor zinc chloride treatment](/preview/png/79813.png)
چکیده انگلیسی
Cd1−xZnxS films suitable for application in photovoltaic devices have been produced by annealing CdS films in vaporous zinc chloride and characterized by optical absorption, X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy. The incorporation of Zn in CdS was found to be dependent on the annealing temperature and duration, reaching a concentration as high as 50% (x=0.5) and producing a blue shift of 0.3 eV in bandgap energy. CdTe solar cells fabricated with Cd1−xZnxS showed substantially higher short-circuit current than the cells with CdS as the window layer. The optimal concentration of Zn was found to be around 5%. High efficiencies were obtained in SnO2/Cd1−xZnxS/CdTe cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 12, December 2010, Pages 2113–2118
Journal: Solar Energy Materials and Solar Cells - Volume 94, Issue 12, December 2010, Pages 2113–2118
نویسندگان
Wei Xia, Jonathan A. Welt, Hao Lin, Hsiang N. Wu, Meng H. Ho, Ching W. Tang,