کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990884 | 1516131 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800â¯rpm for 60â¯s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φb) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 763, 30 September 2018, Pages 622-628
Journal: Journal of Alloys and Compounds - Volume 763, 30 September 2018, Pages 622-628
نویسندگان
Ali Rıza Deniz, Zakir Ãaldıran, Mehmet Biber, Ãmit Ä°ncekara, Åakir AydoÄan,