کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7991116 | 1516136 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-powered Ag-nanowires-doped graphene/Si quantum dots/Si heterojunction photodetectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
We report Ag-nanowires (Ag NWs)-doped graphene/p-type SiO2-embedded Si quantum dots (p-SQDs:SiO2)/n-Si heterojunction photodetectors (PDs). It is found that the p-n junctions show excellent PD characteristics including photocurrent/dark current (on/off) ratio of 105â¯at 0â¯V bias, meaning “self-powered”. The PDs optimized at an Ag NWs concentration of 0.1â¯wt % exhibit 0.32-0.65â¯AW-1 responsivity (R), â¼85% external quantum efficiency (EQE), and â¼4.5â¯Ãâ¯1012â¯cmâ¯Hz1/2/W detectivity in the visible range of 500-900â¯nm. The linear dynamic range and response time of the PDs at 532â¯nm are â¼83â¯dB and â¼2â¯Î¼s, respectively. The loss of the R is only 15% of its initial value while the PDs are kept for 700â¯h in air. In particular, the EQE of the self-powered PD is comparable to that of commercially-available Si PD and better than those of previously-reported graphene/Si PDs. These results suggest that the doped graphene/p-SQDs:SiO2/n-Si heterojunctions are promising for their applications in self-powered optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 758, 25 August 2018, Pages 32-37
Journal: Journal of Alloys and Compounds - Volume 758, 25 August 2018, Pages 32-37
نویسندگان
Dong Hee Shin, Chan Wook Jang, Jong Min Kim, Suk-Ho Choi,