کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79986 | 49370 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application Band gap engineering of RF-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application](/preview/png/79986.png)
چکیده انگلیسی
We demonstrated the preparation and characterization of radio frequency (RF)-sputtered CuInZnSe2 thin films for indium-reduced thin-film solar cell application. Sputtering targets composed of high-purity CuSe, InSe and ZnSe powders were employed for preparing CuInZnSe2 films with various band gaps. Under an optimum condition, an increase of zinc concentration in the film could reduce indium approximately to 45%. The structure of the films showed a chalcopyrite phase with a predominant (1 1 2) reflection. The p-type CuInZnSe2 films exhibited a shift of optical transmittance to a lower wavelength and the band gap could be engineered from 1.0 to 1.25 eV in proportion with increasing zinc concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 941–944
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issues 6–7, June 2009, Pages 941–944
نویسندگان
Rachmat Adhi Wibowo, Kyoo Ho Kim,