کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7999103 | 1516261 | 2015 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 632, 25 May 2015, Pages 392-396
Journal: Journal of Alloys and Compounds - Volume 632, 25 May 2015, Pages 392-396
نویسندگان
Ling Lee, Yue-Ru Dai, Chu-Shou Yang, Wen-Chung Fan, Wu-Ching Chou,