کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80163 | 49375 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical studies on hot wire chemical vapour deposited hydrogenated silicon films at low substrate temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of hydrogenated silicon are deposited by hot wire chemical vapour deposition technique, as an alternative of plasma enhanced chemical vapour deposition technique. By varying the hydrogen and silane flow rate, we deposited the films ranging from pure amorphous to nanocrystallite-embedded amorphous in nature. In this paper we report extensively studied structural and optical properties of these films. It is observed that the rms bond angle deviation decreases with increase in hydrogen flow rate, which is an indication of improved order in the films. We discuss this under the light of breaking of weak Si–Si bonds and subsequent formation of strong Si–Si bonds and coverage of the growing surface by atomic hydrogen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 2, February 2009, Pages 199–205
Journal: Solar Energy Materials and Solar Cells - Volume 93, Issue 2, February 2009, Pages 199–205
نویسندگان
Purabi Gogoi, Pratima Agarwal,