Modeling of light-induced degradation of amorphous silicon solar cells

Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) solar cells has been modeled using computer simulations. In the computer model, the creation of light-induced defects as a function of position in the solar cell was calculated using the recombination profile. In this way, a new defect profile in the solar cell was obtained and the performance was calculated again. The results of computer simulations were compared to experimental results obtained on a-Si:H solar cell with different intrinsic layer thickness. These experimental solar cells were degraded under both open- and short-circuit conditions, because the recombination profile in the solar cells could then be altered significantly. A reasonable match was obtained between the experimental and simulation results if only the mid-gap defect density was increased. To our knowledge, it is the first time that light-induced degradation of the performance and the quantum efficiency of a thickness series of a-Si:H solar cells has been modeled at once using computer simulations.