کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
80319 49382 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
1 MeV electron irradiation influence on GaAs solar cell performance
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
پیش نمایش صفحه اول مقاله
1 MeV electron irradiation influence on GaAs solar cell performance
چکیده انگلیسی

The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1 MeV electrons at room temperature with the fluence up to 4×1016electronscm-2. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 11, November 2008, Pages 1336–1340
نویسندگان
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