کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80319 | 49382 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
1 MeV electron irradiation influence on GaAs solar cell performance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1 MeV electrons at room temperature with the fluence up to 4×1016electronscm-2. The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps H1 are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 11, November 2008, Pages 1336–1340
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 11, November 2008, Pages 1336–1340
نویسندگان
B. Danilchenko, A. Budnyk, L. Shpinar, D. Poplavskyy, S.E. Zelensky, K.W.J. Barnham, N.J. Ekins-Daukes,