کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80566 | 49390 | 2006 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: High rate growth of device-grade microcrystalline silicon films at 8 nm/s High rate growth of device-grade microcrystalline silicon films at 8 nm/s](/preview/png/80566.png)
We have developed a novel technique for large-area high rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to produce uniformly flat-distributed stable high-density plasma spots near cathode surface. The spatial distribution of plasma at holes on cathode surface was analyzed using optical emission spectroscopy for SiH4/H2 plasma with various pressures with a view to optimizing deposition conditions. Improvement of properties of high-rate-grown films was discussed with regard to silane depletion as well as the temperature of film-growing surface. Microcrystalline silicon films with a low defect density of 5×1015 cm−3 obtained at a high rate approaching 8 nm/s demonstrate the effectiveness of the novel cathode.
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3223–3231