کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80569 | 49390 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiNx:H film. We demonstrate that the amount of passivation depends on the SiNx:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3244–3250
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issues 18–19, 23 November 2006, Pages 3244–3250
نویسندگان
H.F.W. Dekkers, S. De Wolf, G. Agostinelli, F. Duerinckx, G. Beaucarne,