Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates

CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited hexagonal crystal structure. Optical band gap of 1.65 eV was obtained. XPS measurements indicated the formation of CdSe. Capacitance–voltage measurements indicated the films to exhibit n-type behaviour. A carrier density of 1017 cm−3 was obtained. Photoelectrochemical cells have exhibited higher efficiency compared to earlier reports on brush-plated films. Spectral response measurements indicated a peak quantum efficiency of 75% at 1.65 eV.