کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8081821 | 1521577 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Monte Carlo simulation of semiconductor detector response to 222Rn and 220Rn environments
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Monte Carlo simulation of semiconductor detector response to 222Rn and 220Rn environments Monte Carlo simulation of semiconductor detector response to 222Rn and 220Rn environments](/preview/png/8081821.png)
چکیده انگلیسی
A new electronic radon/thoron monitor employing semiconductor detectors based on a passive diffusion chamber design has been recently developed at the Helmholtz Zentrum München (HMGU). This device allows for acquisition of alpha particle energy spectra, in order to distinguish alpha particles originating from radon and radon progeny decays, as well as those originating from thoron and its progeny decays. A Monte-Carlo application is described which uses the Geant4 toolkit to simulate these alpha particle spectra. Reasonable agreement between measured and simulated spectra were obtained for both 220Rn and 222Rn, in the energy range between 1 and 10Â MeV. Measured calibration factors could be reproduced by the simulation, given the uncertainties involved in the measurement and simulation. The simulated alpha particle spectra can now be used to interpret spectra measured in mixed radon/thoron atmospheres. The results agreed well with measurements performed in both radon and thoron gas environments. It is concluded that the developed simulation allows for an accurate prediction of calibration factors and alpha particle energy spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Environmental Radioactivity - Volumes 158â159, July 2016, Pages 64-70
Journal: Journal of Environmental Radioactivity - Volumes 158â159, July 2016, Pages 64-70
نویسندگان
J. Irlinger, S. Trinkl, M. Wielunksi, J. Tschiersch, W. Rühm,