کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80898 | 49409 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)xCuyOz films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of (CdTe)xCuyOz have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu2O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 103 Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2248–2254
Journal: Solar Energy Materials and Solar Cells - Volume 90, Issue 15, 22 September 2006, Pages 2248–2254
نویسندگان
S. Jiménez-Sandoval, J. Carmona-Rodríguez, R. Lozada-Morales, O. Jiménez-Sandoval, M. Meléndez-Lira, C.I. Zúñiga-Romero, D. Dahlberg,