کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
81114 | 49425 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A model for distribution of oxygen in multicrystalline silicon ingot grown by directional solidification
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A model for distribution of oxygen in multicrystalline silicon ingot grown by directional solidification A model for distribution of oxygen in multicrystalline silicon ingot grown by directional solidification](/preview/png/81114.png)
چکیده انگلیسی
A model, including segregation from silicon melt to silicon crystal as well as evaporation from silicon melt to Ar atmosphere, was established for simulating the oxygen distribution in multicrystalline silicon (mc-si) ingot, which shows good agreement with the experimental results. According to this model, the oxygen distribution in the bottom of ingot is mainly determined by the evaporation of oxygen, whereas that in the top of ingot is dominated by the segregation of oxygen. Furthermore, it could be found that the Oi profiles in growth direction of ingots become more and more steeper with the increase of the exponent X.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 18, 6 November 2007, Pages 1688–1691
Journal: Solar Energy Materials and Solar Cells - Volume 91, Issue 18, 6 November 2007, Pages 1688–1691
نویسندگان
Zhenqiang Xi, Jun Tang, Hai Deng, Deren Yang, Duanlin Que,