کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149453 | 1524394 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO](/preview/png/8149453.png)
چکیده انگلیسی
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5Â at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 105-109
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 105-109
نویسندگان
K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, Y. El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P.L. Voss, M. Razeghi, A. Ougazzaden,