کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149622 | 1524404 | 2015 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlxIn1âxAsySb1ây alloys lattice matched to InAs(1Â 0Â 0) grown by molecular beam epitaxy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
AlxIn1âxAsySb1ây quaternary alloys lattice-matched to InAs were successfully grown by molecular beam epitaxy (MBE) for use as buffer layers for substrate isolation in InAs channel devices. The use of In-containing quaternary buffer layers with 5% In was found to dramatically improve the heterointerface between the buffer and a surface InAs channel layer. The composition of these alloys and the extent of lattice matching were accurately determined by double crystal X-ray measurements. A simple model was used to estimate the variation of critical thickness with lattice mismatch for AlInAsSb epitaxially grown on an InAs substrate. Layers with high Al content and low As mole fraction were grown by modulated MBE technique which was found to significantly improve the surface morphology and the composition control of the alloys. In contrast, quaternary alloys with low Al content were grown by conventional MBE and had an rms roughness of less than 0.2Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 33-38
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 33-38
نویسندگان
J.S. Rojas-Ramirez, S. Wang, R. Contreras-Guerrero, M. Caro, K. Bhatnagar, M. Holland, R. Oxland, G. Doornbos, M. Passlack, C.H. Diaz, R. Droopad,