کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8150192 | 1524413 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface and bulk electronic properties of low temperature synthesized InN microcrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface and bulk electronic properties of low temperature synthesized InN microcrystals Surface and bulk electronic properties of low temperature synthesized InN microcrystals](/preview/png/8150192.png)
چکیده انگلیسی
Structural and electronic properties of InN microcrystals, which are synthesized by nitridation of LiInO2 with NaNH2 in a Teflon-lined autoclave at temperatures ranging between 170 and 240 °C, are studied as a function of the growth temperature using x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), photo-absorption, Raman spectroscopy and x-ray photo-emission spectroscopy (XPS) techniques. Our study shows the formation of wurtzite InN crystals with an average size of 100 nm even at 170 °C. The study, furthermore, suggests an enhancement of electron concentration and a reduction of electron mobility in the crystal as the synthesis temperature (TS) decreases. The density of certain defects lying very close to the band edge is also found to increase with the reduction of TS. These defects are expected to act as donors, which can explain the enhancement of carrier concentration as the growth temperature decreases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 416, 15 April 2015, Pages 154-158
Journal: Journal of Crystal Growth - Volume 416, 15 April 2015, Pages 154-158
نویسندگان
B.K. Barick, S. Dhar,