Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs

Low Bi content GaAs is a promising material for new optical devices with less heat production. The growth of such devices by metal organic vapor phase epitaxy faces several challenges. This paper summarizes results of the formation of metallic droplets during the epitaxial growth of Ga(AsBi) using all-liquid group III and V precursors. The samples that are grown, investigated by atomic force microscopy and scanning electron microscopy, show a different metal droplet distribution over the surface depending on the growth temperature and the V/III ratio of the precursors. Investigations with energy dispersive X-ray analysis and selective etching prove the appearance of phase separated Ga-Bi and pure Bi droplets at growth temperatures between 375 °C and 425 °C, which is explainable by the phase diagram of Ga-Bi. Since the pure Bi droplets show a preferred orientation on the surface after cool-down, transmission electron microscopy measurements were done by using the dark field imaging mode in addition to electron diffraction and high resolution imaging. These experiments show the single crystalline structure of the Bi droplets. The comparison of experimental diffraction patterns with image simulation shows a preferred alignment of Bi {10−1} lattice planes parallel to GaAs {202} lattice planes with the formation of a coincidence lattice. Thus it is possible to derive a model of how the Bi droplets evolve on the GaAs surface.