کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8150832 | 1524425 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy](/preview/png/8150832.png)
چکیده انگلیسی
The effect of additional HCl flow on the growth of a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy was investigated. Upon increasing the additional HCl flow rate, the surface roughness of the a-plane GaN layers, as measured by atomic force microscopy, reduced. The crystal quality of a-plane GaN, however, deteriorated, as confirmed by high stacking fault density observed by transmission electron microscopy, relating to the increased nuclei density and mosaicity and a high full width at half maximum in the Ï-scan X-ray rocking curve. These observations were attributed to the large difference of growth rate and etch rate along c-direction, and m-direction of a-plane GaN, which were originated from the surface energetics of the crystallographic planes of GaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 404, 15 October 2014, Pages 199-203
Journal: Journal of Crystal Growth - Volume 404, 15 October 2014, Pages 199-203
نویسندگان
Moonsang Lee, Dmitry Mikulik, Sungsoo Park, Kyuhyun Im, Seong-Ho Cho, Dongsu Ko, Un Jeong Kim, Sungwoo Hwang, Euijoon Yoon,