کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151965 | 1524446 | 2013 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of low etch pit density ZnGeP2 crystals by the modified vertical Bridgman method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of low etch pit density ZnGeP2 crystals by the modified vertical Bridgman method Growth of low etch pit density ZnGeP2 crystals by the modified vertical Bridgman method](/preview/png/8151965.png)
چکیده انگلیسی
Based on the high-quality polycrystalline ZnGeP2 (ZGP) synthesized by the optimized two-temperature-zone method, ZnGeP2 single crystals with dimensions of 16 mm diameter and 70 mm length were successfully grown using the modified vertical Bridgman method. The etch pit density (EPD) of as-growth crystals can be reduced to a level of 510 cmâ2; the full width at half maximum (FWHM) of the X-ray rocking curve of the crystals is 20â³; the transmittance of the annealed and polished wafers (1.7 mm thick) can reach about 57% in the wavelength range 3-8 µm and the optical absorption coefficient is about 0.1 cmâ1 at 2.1 µm; using KTP optical parametric oscillator (OPO) pumping source at 2.1 µm, the output power of ZGP OPO is 2.8 W at 3-5 µm. These results suggest that this modified vertical Bridgman method can grow high structural and optical quality ZGP single crystals for OPOs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 383, 15 November 2013, Pages 79-83
Journal: Journal of Crystal Growth - Volume 383, 15 November 2013, Pages 79-83
نویسندگان
Liang Shen, Biao Wang, Dong Wu, Zhongxing Jiao,