کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152013 | 1524448 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals](/preview/png/8152013.png)
چکیده انگلیسی
Traditionally the critical value Îcrit of the ratio Î of the pulling speed v over the thermal gradient G at the melt-solid interface needed to grow defect free silicon is assumed to be a constant for a given crystal doping and resistivity. Recently it was however shown that Îcrit depends on stress and thus also on G, in particular on its derivative with respect to the distance from the melt-solid interface. As G also depends on v, a process window exists for the critical pulling speed which depends both on the crystal radius and on Îcrit. The implications for the development of pulling processes for large diameter defect free silicon crystals are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 134-138
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 134-138
نویسندگان
Jan Vanhellemont,