کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152081 | 1524449 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phosphorus diffusion gettering of substitutional metal contaminants at a small-angle grain boundary in n-type silicon: The case of gold
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Phosphorus diffusion gettering of substitutional metal contaminants at a small-angle grain boundary in n-type silicon: The case of gold Phosphorus diffusion gettering of substitutional metal contaminants at a small-angle grain boundary in n-type silicon: The case of gold](/preview/png/8152081.png)
چکیده انگلیسی
In this paper, we have studied the effect of phosphorus diffusion gettering on the Au impurities at a model small-angle grain boundary (GB) in n-type silicon by combining spreading resistive profiling and current-voltage characteristic techniques. It is found that at a low level contamination, a single-step phosphorus gettering can be effective for most of Au impurities at the GB by extending the diffusion time. However, at a high level contamination, a two-step phosphorus gettering should be utilized to getter out the gold impurities at the GB. After the effective phosphorus gettering for Au impurities, the GB electrical characteristics can be recovered to the original level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 51-54
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 51-54
نویسندگان
Tingting Jiang, Xuegong Yu, Ruixin Fan, Xin Gu, Deren Yang,