کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152439 | 1524474 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the formation of vacancy defects in III-nitride semiconductors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In-grown group III (cation) vacancies (VGa, VAl, VIn) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as ON or the N vacancy (VN). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n-type conductivity and add to the scattering centers limiting the carrier mobility in these materials. This work presents results obtained with positron annihilation spectroscopy in a variety of GaN, AlN, InN samples from different sources. The vacancy-donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 350, Issue 1, 1 July 2012, Pages 93-97
Journal: Journal of Crystal Growth - Volume 350, Issue 1, 1 July 2012, Pages 93-97
نویسندگان
F. Tuomisto, J.-M. Mäki, C. Rauch, I. Makkonen,