کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9586212 | 1505939 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of high-quality ZnO thin films grown by a sputtering method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We have investigated optical properties of high-quality ZnO thin films grown by a sputtering method. By introducing a low-temperature buffer layer of ZnO, the lattice-mismatched strain is relaxed and the crystallinity is improved remarkably. In the absorption spectrum at 10Â K, the absorption peaks of the A and B excitons are observed. In the photoluminescence (PL) spectrum, the free-exciton PL is observed and the defect-related PL is negligibly weak. These results clearly indicate high crystallinity of the film. Furthermore, under high-density excitation conditions, a PL band originating from an inelastic scattering process of excitons, the so-called P emission, is observed in the ZnO thin film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 112, Issues 1â4, April 2005, Pages 191-195
Journal: Journal of Luminescence - Volume 112, Issues 1â4, April 2005, Pages 191-195
نویسندگان
T. Shimomura, D. Kim, M. Nakayama,