کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9586273 | 1505935 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of size and depth profile of Si-nc imbedded in a SiO2 layer on the photoluminescence spectra
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It has been demonstrated that the size and depth profile of silicon nanocrystals produced by implanting Si+ ions (â¼100Â keV) into SiO2 are dependent on the implantation dose. Here, we demonstrate that these parameters have, in turn, a significant effect on the photoluminescence (PL) spectra of Si-nc imbedded in a thin SiO2 layer formed on a silicon backing. Strong spectral modulation is observed compared with the PL spectra of Si-nc imbedded in bulk SiO2 for implantation doses of 6Ã1016, 8Ã1016 and 1Ã1017 Si+/cm2, whereas for an implantation dose of 3Ã1017 Si+/cm2, very little spectral deformation is noted. The modulation in the luminescence spectrum is caused by optical interference effects produced by the layered structure. Two types of optical interference must be considered: the pump laser standing wave, which determines the pump amplitude as a function of depth in the SiO2 layer, and the optical interference of the Si-nc luminescence, which is a function of the depth of the Si-nc in the SiO2 layer. Such modulation in a layered structure can serve to tailor the Si-nc luminescence spectrum for specific applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 115, Issues 1â2, October 2005, Pages 62-68
Journal: Journal of Luminescence - Volume 115, Issues 1â2, October 2005, Pages 62-68
نویسندگان
R. Smirani, F. Martin, G. Abel, Y.Q. Wang, M. Chicoine, G.G. Ross,