کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9617681 | 49160 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report here a new route to prepare nanocrystalline β-silicon carbide with high specific surface areas and mesoporosity. The preparation method was via the reaction of ordered mesoporous carbons (OMCs, carbon replicas of MCM-48, SBA-15 and KIT-6) with silicon powder at the temperature of 1200-1300 °C, which is below the melting point of silicon, 1420 °C. The SiC samples were characterized by XRD, SEM, TEM, N2 adsorption and other techniques, which showed that the SiC samples were nanocrystalline and had a high surface area of up to 147 m2 gâ1 and a mesoporosity in the range of 5-40 nm. In addition, the silicon vapor infiltration method at a temperature beyond 1420 °C was also brought into comparison.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microporous and Mesoporous Materials - Volume 82, Issues 1â2, 5 July 2005, Pages 137-145
Journal: Microporous and Mesoporous Materials - Volume 82, Issues 1â2, 5 July 2005, Pages 137-145
نویسندگان
Zhicheng Liu, Weihua Shen, Wenbo Bu, Hangrong Chen, Zile Hua, Lingxia Zhang, Lei Li, Jianlin Shi, Shouhong Tan,