کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618658 | 49464 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gallium-doped ZnO thin films deposited by chemical spray
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gallium-doped zinc oxide (ZnO:Ga) thin films were deposited on glass substrates by the spray pyrolysis technique. The effect of the variation of the [Ga]/[Zn] rate in the starting solution, the substrate temperature as well as the post-annealing treatments on the physical properties was examined. The electrical properties of the films show an improvement with the Ga incorporation and the annealing treatment. All the films were found to be polycrystalline and show a (0 0 2) preferential growth, irrespective of the deposition conditions. The films were of n-type conductivity with an electrical resistivity in the order of 8Ã10â3 Ω cm and optical transmittance higher than 80% in the visible region. These results makes chemically sprayed ZnO:Ga potentially applicable as transparent electrode in photovoltaic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 107-116
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 107-116
نویسندگان
H. Gomez, A. Maldonado, M. de la L. Olvera, D.R. Acosta,