کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618675 | 49464 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of residual stress in EFG ribbons using a phase-shifting IR photoelastic method
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Measurement of residual stress in EFG ribbons using a phase-shifting IR photoelastic method Measurement of residual stress in EFG ribbons using a phase-shifting IR photoelastic method](/preview/png/9618675.png)
چکیده انگلیسی
This paper reports on the measurement of residual stress in EFG silicon ribbons for solar cell applications using the phase-shifting infrared (IR) photoelastic method. The samples analysed were wafers cut from EFG octagons with 100Â mm face width and from EFG 125Â mm face-width octagon under development. Experimental results show that the distribution of residual stress in both types of samples is similar, within measurement uncertainties. The average residual stress in the samples is about 8Â MPa. Maximum stresses of around 30Â MPa are associated with twin and grain boundaries. Significant variations of stress along the growth direction, possibly related to buckling, were also measured.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 311-316
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 311-316
نویسندگان
M.C. Brito, J. Maia Alves, J.M. Serra, R.M. Gamboa, C. Pinto, A.M. Vallera,