کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618680 | 49464 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30Ã40Â cm2) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12Â MHz. In this work the solar cell was split into small areas of 0.126Â cm2, aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750Â nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83Â V, short circuit current density of 17.14Â mA/cm2 and an efficiency of 8% were obtained at growth rates higher than 0.3Â nm/s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 349-355
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 349-355
نویسندگان
L. Raniero, N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, R. Martins,