کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618682 | 49464 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optoelectronic properties of chlorine- and oxygen-doped CdTe thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optoelectronic properties of chlorine- and oxygen-doped CdTe thin films Optoelectronic properties of chlorine- and oxygen-doped CdTe thin films](/preview/png/9618682.png)
چکیده انگلیسی
The influence of oxygen codopant upon the optoelectronic properties of chlorine-doped CdTe films is being investigated. It is shown that a small quantity of oxygen decreases the resistivity of films, whereas at higher concentrations oxygen codopant increases the resistivity of films up to 6 orders of magnitude. A subsequent annealing in tellurium vapor pressure decreases the resistivity of films. It is supposed that an anomalous resistivity drop around 0.22Â kPa is caused by shallow acceptor complexes that oxygen forms with group I impurities like copper and silver. At higher concentrations oxygen forms isoelectronic complexes with cadmium vacancies, which cause a high resistivity of films. Te annealing extracts oxygen from the films as Te forms with dissolved oxygen tellurium oxide TeO2 which easily sublimates. Photoconductivity of the oxygen and chlorine-doped CdTe films is poor, or is not detected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 369-373
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 369-373
نویسندگان
V. Valdna,