کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618688 | 49464 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of microcrystalline silicon-carbon films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of microcrystalline silicon-carbon films Preparation of microcrystalline silicon-carbon films](/preview/png/9618688.png)
چکیده انگلیسی
The effects of discharge parameters on the properties of hydrogenated silicon-carbon films deposited by PECVD system have been investigated. Hydrogenated microcrystalline silicon-carbon films have been grown at low RF power. The increase in RF power from 5 to 25Â W leads to a decrease of the crystallinity degree and an enhancement of the carbon content from 0.025 to 0.10. The optical energy gap can be tuned in the 1.86-1.96Â eV range and the dark conductivity decreases by about three orders of magnitude. In the investigated pressure range (1.7-2.9Â Torr) microcrystalline samples show approximately the same optical and electrical properties. Microcrystalline films with high dark conductivity present an n-type character and the micro-mono crystalline silicon heterostuctures fabricated with these materials reveal a rectifying behaviour of the junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 433-444
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 433-444
نویسندگان
U. Coscia, G. Ambrosone, S. Lettieri, P. Maddalena, V. Rigato, S. Restello, E. Bobeico, M. Tucci,