کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618701 | 49464 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optoelectronic devices based on evaporated pentacene films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium-tin-oxide layer. The pentacene layer was evaporated in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature and moderate deposition rates (<10Â Ã
/s). Optical measurements evidence absorption peaks at energy positions 1.86, 1.97, 2.13, 2.3 and 2.5Â eV, corresponding to singlet states of the lowest unoccupied molecular orbital of pentacene. The current-voltage characteristics show good rectifying behaviours. Finally, a clear antibatic response is observed in the external quantum efficiency of the photodiodes when illuminated through the indium-tin-oxide contact.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 567-573
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 567-573
نویسندگان
C. Voz, J. Puigdollers, I. MartÃn, D. Muñoz, A. Orpella, M. Vetter, R. Alcubilla,