کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670304 | 1450401 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High quality strained Si/SiGe substrates for CMOS and optical devices
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Using LPCVD epitaxy on 200Â mm standard wafers high quality strained Si/SiGe substrates (sSi/SiGe) based on a graded buffer approach have been developed. Physical and chemical analysis of the substrates, show an efficient amount of relaxation of the SiGe buffer and a fully strained silicon cap. Process integration of test devices into the sSi/SiGe layers was performed using a simply modified CMOS process. NMOS and PMOS transistors were integrated together with PIN diodes in a single sSi/SiGe substrate using the same process flow. Electrical measurements showed the enhancement of charge carrier mobility of up to 80% for electrons and 37% for holes compared to epitaxially grown silicon for reference. Also an enhanced photo responsivity at a wavelength of 1310Â nm for PIN diodes integrated into the SiGe buffers was demonstrated. Low leakage currents of the PIN diodes conclude good crystal quality of the SiGe buffer layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 215-220
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 215-220
نویسندگان
J. Weber, L. Nebrich, F. Bensch, K. Neumeier, G. Vogg, R. Wieland, D. Bonfert, P. Ramm,