کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670334 | 1450401 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lateral solvent diffusion characterization of low k dielectric plasma damage and ALD barrier film closure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The lateral diffusion of toluene solvent molecules was employed to probe the porous structures of plasma damaged low k dielectrics and ultra-thin ALD copper diffusion barriers. A change in the pore structure of a microporous CVD low k was determined from the absence of diffusion after the plasma treatment of a thin film (<270Â nm). This indicated a densification or reduction of the pore structure below the 6.8Â Ã
probe molecule size. Atomic layer deposited layers of WNC and TaN were probed for defect channels when deposited on porous low k substrates. Toluene was able to penetrate through microchannels in the films and diffuse laterally inside the underlying porous low k. This allowed a non-line-of-site assessment of ALD film surface closure. In both cases the refractive index changes resulting from toluene filling of the low k pores was observed optically by ellipsometry or optical microscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 411-415
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 411-415
نویسندگان
Thomas Abell, Jorg Schuhmacher, Zsolt Tokei, Youssef Travaly, Karen Maex,