Improvement in NiSi/Si contact properties with C-implantation

We have investigated effects of C+ ion implantation into Si substrates on electrical properties of NiSi/Si(0 0 1) contacts. Increase in sheet resistance of a NiSi layers on Si was effectively suppressed by the C implantation, which is due to preventing the agglomeration of polycrystalline NiSi grains. The contact resistance of NiSi/p+-Si contacts with C implantation is formed to be lower than that without C, while that of NiSi/n+-Si contacts is not influenced by C. The pile-up of B atoms at the NiSi/Si interface after silicidation of Ni/Si systems with C implantation accounts for this phenomenon.