کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670354 | 1450401 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives](/preview/png/9670354.png)
چکیده انگلیسی
High permittivity insulators (high-k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuits performances. However, high-k properties are expected to vary with frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate high-k behavior from DC to microwave frequency. Real permittivity (k or εr) and losses (εâ³) extraction is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin planar dielectrics integrated below a copper coplanar transmission line. By adjusting software modeling to experimental measurements from 40 MHz up to 40 GHz, the complex permittivity of the high-k material is determined. The simplicity of the test structure, the in situ technique and the investigation protocol enable the method to check a large variety of high-k dielectrics. Results of Si3N4 and Ta2O5 insulators are presented in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 548-553
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 548-553
نویسندگان
T. Lacrevaz, B. Fléchet, A. Farcy, J. Torres, M. Gros-Jean, C. Bermond, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy,