کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670437 | 1450402 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Computer simulated dense-random packing models as approach to the structure of porous low-k dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Nanoporous low-k dielectrics are simulated by means of the model of randomly packed hard spheres. The spheres and the space between them represent the pores and the solid material of the insulator, respectively. The generalisation of the model for arbitrary continuous distributions offers the opportunity to optimise the structures with respect to low k values. A local maximum of 70% porosity is obtained for a power-law pore size distribution with exponent â3.3. The elastic constants of the models are calculated for the isotropic case in the composite sphere assemblage approach. Results for the effective dielectric constant, the Young's modulus and the bulk and shear modulus are presented for the range of porosity up to 70%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 535-543
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 535-543
نویسندگان
H. Hermann, A. Elsner, M. Hecker, D. Stoyan,