کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670461 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Ultra thin organic layers of benzene-type molecules are able to passivate Si surfaces. The organic layers were electrochemically deposited on Si surfaces from aqueous solution of diazonium compounds and show a blocking of the charge transfer from Si into the electrolyte after the deposition process. Electron microscopic images reveal a compact and homogeneous organic layer of 4-bromobenzene on the Si. The surface recombination increases only slightly with respect to a well H-passivated Si surface, so that the interface state density is about 1011 cm2 or slightly below. Organic layer modified Si surfaces are much longer stable in ambient air than the H-terminated surface as observed by a slower decay of the integrated photoluminescence intensity with time. Thermal desorption measurements show that the organic layer is stable up to about 200 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 62-65
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 62-65
نویسندگان
J. Rappich, P. Hartig, N.H. Nickel, I. Sieber, S. Schulze, Th. Dittrich,