کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670497 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of high-k HfO2 films on Si1âxGex substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electrical and structural properties of HfO2 films on Si1âxGex substrates with various Ge concentrations (x = 0.1, 0.2, 0.3) were investigated. The behavior of Ge in the interfacial layer (IL) and its effects on the electrical and structural properties after post-annealing were studied in detail. The Ge of the substrate degrades the interfacial properties by interfacial reaction during HfO2 ALD. It also plays an important role in reducing the capacitance equivalent thickness and hysteresis after post-annealing. The improvements in the electrical properties originated from IL thinning due to a drive-out of Ge from the IL and the increase in permittivity of the HfO2 layer due to Hf-Ge-oxide formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 222-225
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 222-225
نویسندگان
Tae Joo Park, Seong Keun Kim, Jeong Hwan Kim, Jaehoo Park, Moonju Cho, Suk Woo Lee, Sug Hun Hong, Cheol Seong Hwang,