کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670506 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Memory devices based on MOS structures with Silicon nanocrystals (Si-nc) embedded in the gate oxide have been investigated at the nanoscale with a Conductive Atomic Force Microscope (C-AFM). The high lateral resolution of this technique allows to study extremely small areas (â¼300 nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only â¼20% of the Si-nc are charged (in agreement with the macroscopic characterization), demonstrating that C-AFM is a powerful tool to investigate the performance of Si-nc memory devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 268-271
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 268-271
نویسندگان
M. Porti, M. Avidano, M. NafrıÌa, X. Aymerich, J. Carreras, B. Garrido,