کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670509 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Work function (Ïm) of metal transistor gates was controlled by using Al-Ni and Ni-Ta alloys made through an interdiffusion process, in which stacks of different metals were annealed. In addition to conventional capacitance-voltage measurements for Ïm evaluation, Ïm uniformity was also measured microscopically. The average Ïm of the Al-Ni alloy was successfully changed compared to that of pure Al by interdiffusion at 500 °C. The Ïm nonuniformity of Al-Ni, however, was problematic. Though Ni-Ta alloys required interdiffusion at a higher temperature of 700 °C, the Ni-Ta alloys had better Ïm uniformity. Thus, the Ni-Ta alloy is a more suitable candidate for use in metal gates of high-integrity transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 284-287
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 284-287
نویسندگان
T. Matsukawa, Y.X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru,