Building and testing submicrometer metallic (gold) air-bridges for nanotransport applications

The properties of submicrometer gold air-bridges are investigated for their suitability as elements of an electronic device. The fabrication procedure of a gated vertical quantum dot resonant tunneling diode structure implementing air-bridges is presented as a demonstration. Our investigations show that air-bridges produced by multiple acceleration voltage lithography exhibit excellent mechanical and electrical stability for nanotransport application.