کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670643 | 1450405 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pad etch optimization to minimize polymer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this article, passivation layer etch process was studied to minimize polymer along sidewall and to prevent bond pad peeling. It was identified that SiN breakthrough etching step caused more polymers compared to main etching. The effects of power, CF4 and O2 gas flow on polymer generation during the SiN breakthrough etching have been studied. Scanning electron microscope and Auger electron spectroscopy were used to inspect and analyze polymer. Defects scan and review were performed by EV300⢠after etching and wet clean. The etching condition corresponding to 250 W, 20 sccm O2, and 40 sccm CF4 was found to be the optimum condition to minimize polymer without attacking the copper surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 204-209
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 204-209
نویسندگان
Xiaomei Bu, Meng Luo, ChianYuh Sin, Fan Zhang, Pradeep Yelehanka, Tae Jong Lee, Ahila Krishnamoorthy,