کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670655 | 1450405 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis on the effect of parallel current path on the quality factor of CMOS spiral inductors for 1-10 GHz
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A structure of spiral inductor having a parallel current path through the branch of the metal strip was designed to achieve a quality (Q) factor enhancement compatible with conventional CMOS and/or established SiGe process in RF and microwave arena. The Q factor enhanced by 12% was quantitatively analyzed with a lumped-element model and its origin was investigated at a structural point of view. As a result we noted that the parallel-branching structure greatly reduced the series resistance of the inductor at a high frequency range of GHz by suppressing current crowding and in turn enhanced the Q factor beyond the additional parasitic capacitance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 292-296
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 292-296
نویسندگان
Dongwoo Suh, Bongki Mheen,