Nanoindentation and nanoscratch characteristics of Si and GaAs

The nanomechanical characteristics of Si and GaAs were investigated using nanoindentation and nanoscratch techniques. The hardness, Young's modulus and plastic energy were calculated from the loading-unloading curve under different load conditions, hold times and indentation cycles. The scratching volume removal rate and wear properties were also obtained. The results indicate that Young's modulus and the hardness of Si and GaAs decreased as the applied load, hold time and indentation cycle were increased. In addition, the loading curve for GaAs clearly shows a pop-in phenomenon. During the nanoscratch test, the wear depth for Si and GaAs decreased as the feed was increased and the wear depth of GaAs apparently increased as the applied load was increased. The volume of the removed material was used to evaluate the hardness of the material using the scratch technique.