کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699133 | 1461440 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomically controlled Ge epitaxial growth on Si(1Â 0Â 0) in Ar-plasma-enhanced GeH4 reaction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Atomically controlled Ge epitaxial growth on Si(1Â 0Â 0) in Ar-plasma-enhanced GeH4 reaction Atomically controlled Ge epitaxial growth on Si(1Â 0Â 0) in Ar-plasma-enhanced GeH4 reaction](/preview/png/9699133.png)
چکیده انگلیسی
Ar-plasma-enhanced GeH4 reaction using an ultraclean electron cyclotron resonance (ECR) plasma apparatus is investigated, and atomically flat Ge epitaxial growth on Si(1 0 0) is achieved even without substrate heating. It is found that the crystallinity degradation of deposited Ge film is caused by incorporation of Ar into the film under Ar plasma irradiation. The Ar incorporation could be suppressed by lowering substrate surface temperature as well as incident Ar ion energy. The Ge film has large compressive in-plane strain and relaxes by heat treatment at 600 °C. These results open the way to atomically controlled Ge epitaxial growth at very low temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 69-72
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 69-72
نویسندگان
Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota,