Quantification of Ge and B in SiGe using secondary ion mass spectrometry

This paper reports on routine secondary ion mass spectrometry (SIMS) applications in SiGe EPI process control. Subjects, among others, are quantitative Ge and B co-dopant depth profiles because of their importance for device performance. SIMS depth profiling with oxygen primary ions at normal incidence gives superior depth resolution, whereas Cs sputtering allows arsenic and oxygen monitoring. An intrinsic method to compensate erosion rate variations with Ge-content is proposed.